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miauw.org crack windows 10 serial keygen password  make sure you are listening to the right crack  this invention relates to a method of manufacturing a semiconductor device such as a transistor using the trench-gate structure and the transistor manufactured by the method, and to a method of manufacturing an electro-optical device such as a liquid crystal display device using the transistor manufactured by the method. transistors have conventionally been used as elements for constituting a semiconductor device such as a cmos circuit. with a more recent tendency to increase the integration density of the semiconductor device, transistors formed in each well for isolation from other wells in the semiconductor substrate are increasingly miniaturized. in order to miniaturize the transistors, it is effective to use a technique of forming a gate electrode buried in a trench formed in a semiconductor substrate. such a technique is disclosed in, for example, japanese patent unexamined publication (kokai) no. hei 8-296667. the present inventors discovered that, when a conductive film is formed on the inner surface of the trench formed in a semiconductor substrate by the conventional technique, a high stress is applied to the conductive film, thereby producing crystal defects in the conductive film. this causes a problem of deteriorating the characteristic of the semiconductor device. an object of the present invention is to provide a method of manufacturing a semiconductor device using a trench-gate structure, wherein crystal defects of a conductive film formed on the inner surface of a trench are reduced to the utmost. the present invention provides a method of manufacturing a semiconductor device using a trench-gate structure, wherein a conductive film formed on the inner surface of a trench is etched to a desired thickness to fill the trench with the conductive film. it is noted here that xe2x80x9cthe conductive film formed on the inner surface of the trenchxe2x80x9d used in the above-mentioned embodiment and in the present invention refers to the conductive film constituting a gate electrode or a wiring (for example, a metal film, an alloy film, a silicide film, or a conductive film consisting of a plurality of layers of them). also, the xe2x80x9cthe conductive film formed on the inner surface of the trenchxe2x80x9d refers to a film forming an electrode, a conductive film such as a wiring, and a metal-silicide film formed on the inner surface of a trench. 84d34552a1