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we were able to capture the different fracture geometries exhibited by the two methods of annealing used in this work, and show that the microstructural changes that occur as silicon is damaged at high temperature are very clearly reflected in the morphology of the crack surfaces produced during fracture at room temperature. because the dislocation activities are strongly coupled with each other, the dislocations involved are much more complicated than previously thought. dislocations have a crucial influence on the evolution of the crack, which is attributed to their interactions, diffusions and deformations. as the damage process is triggered, the dislocations become more and more unstable. the deformation process of the dislocation structure has a large influence on the crack growth. as dislocation movements continue, the rearrangement of the dislocation structures, the diffusion of the dislocation structures and the structural transition of the dislocation structures cause the dislocation structure to change and the crystal damage to evolve. the dislocations on the fracture surface were identified through the process of image analysis. in the first step, the dislocation images were converted into binary images. secondly, a threshold was used to determine the dislocation images, and the binary images were processed to remove the noise points.


the dislocation density for dislocation-free silicon wafers is found to be (1.23,(pm 0.02),hbox mm^ -2). therefore, after the defect-free silicon wafers were damaged by annealing at 1250^oc for 2 hours, the dislocation densities increased to (2.42,(pm 0.04),hbox mm^ -2) and (2.80,(pm 0. the dislocation images in fig. 2a,b,d,e,g,h and 3a,b,d,e,g,h were obtained from the original dislocation images shown in fig. 2c,f,i,j and 4c,f,i,j, respectively. the dislocation images of fig. 2 and 3 are enlarged compared with those of fig. 4, which can be clearly observed in the fracture surfaces of fig. 5a,b,d,e,g and 5c,d,f,h. this indicates that the process of damage and fracture are strongly coupled. this shows that the stresses on the dislocation structure at the crack front will increase during the damage process, and will cause the dislocation structure to change and the crystal damage to evolve. the increase in dislocation density is attributed to the increase of dislocation activities and the diffusion of dislocation structures, which will be discussed in the following section. 84d34552a1